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NTZD3156C
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
Total Gate Charge
Q G(TOT)
1.39
2.5
Threshold Gate Charge
Gate ? to ? Source Charge
Q G(TH)
Q GS
N
V GS = 4.5 V, V DS = 10 V; I D = 540 mA
0.1
0.26
Gate ? to ? Drain Charge
Total Gate Charge
Q GD
Q G(TOT)
0.39
1.49
2.5
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
P
V GS = ? 4.5 V, V DS = ? 10 V; I D = ? 430 mA
0.1
0.3
0.37
SWITCHING CHARACTERISTICS (V GS = V) (Note 4)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
t d(ON)
t r
t d(OFF)
N
V GS = 4.5 V, V DD = 10 V, I D = 540 mA,
R G = 10 W
7.7
5.3
21
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t f
t d(ON)
t r
t d(OFF)
t f
P
V GS = ? 4.5 V, V DD = ? 10 V, I D = ? 430 mA,
R G = 10 W
10
9.2
6.5
29
19.5
ns
Drain ? Source Diode Characteristics
Forward Diode Voltage
Reverse Recovery Time
V SD
t RR
N
P
N
P
N
P
V GS = 0 V, T J = 25 ° C
V GS = 0 V, T J = 125 ° C
V GS = 0 V,
dIS/dt = 100 A/ m s
I S = 350 mA
I S = ? 350 mA
I S = 350 mA
I S = ? 350 mA
I S = 350 mA
I S = ? 350 mA
0.77
? 0.77
0.65
0.63
9.4
14.6
1.2
? 1.2
V
ns
4. Switching characteristics are independent of operating junction temperatures
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